Semiconductor apparatus having contacts of multiple heights and method of making same

A semiconductor apparatus, comprising:

• a substrate;
• a first conductive element disposed in the substrate;
• a second conductive element disposed in the substrate;
• a pre-metal dielectric layer disposed on the substrate and having a capacitor well formed therein;
• a first metal layer, the pre-metal dielectric layer being disposed between the substrate and the first metal layer;
• a first contact extending from the first conductive element to the first metal layer;
• and
• a second contact extending from the second conductive element at least to the capacitor well, wherein the second contact is shorter than the first contact.

A method of manufacturing a semiconductor apparatus, comprising:

• providing a substrate;
• forming a first conductive element in the substrate;
• forming a second conductive element in the substrate;
• providing a pre-metal dielectric layer on the substrate;
• forming a capacitor well in the pre-metal dielectric layer;
• providing a first metal layer on the pre-metal dielectric layer;
• providing a first contact extending from the first conductive element to the first metal layer;
• and
• providing a second contact extending from the second conductive element to at least a lower limit of the capacitor well, wherein the second contact is shorter than the first contact.