Fin-type resistors
AssigneeInternational Business Machines Corporation
InventorsDavid M. Fried, Edward J. Nowak
Life of this patent
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Abstract
A method of forming a Fin structure including a resistor present in the thin vertically oriented semiconductor body is provided. The method includes the steps of forming at least one vertically-oriented semiconductor body having exposed vertical surfaces on a substrate; implanting dopant ions into the exposed vertical surfaces of the at least one semiconductor body off-axis at a concentration and energy sufficient to penetrate into the exposed vertical surfaces of the at least one semiconductor body without saturation; and forming contacts to the at least one semiconductor body. The present invention is directed to a Fin structure which includes a resistor present within the thin vertically oriented semiconductor body.
Claims19
A method of forming a resistor in a Fin structure comprising the steps of:
- forming at least one vertically oriented semiconductor body having exposed vertical surfaces on a substrate;
- implanting dopant ions into said exposed vertical surfaces of said at least one semiconductor body off-axis at a concentration and energy sufficient to penetrate into said exposed vertical surfaces of said at least one semiconductor body without saturation;
- and
- forming contacts to said at least one semiconductor body.
A method of controlling the resistance of a plurality of vertically oriented semiconductor bodies comprising the steps of:
- forming a structure having a plurality of vertically oriented semiconductor bodies on a substrate, each of said bodies having exposed vertical surfaces and differing widths;
- and
- implanting dopant ions off-axis into said plurality of vertically oriented semiconductor bodies at a concentration and energy sufficient to penetrate into exposed vertical surfaces of said plurality of vertically oriented semiconductor bodies without saturating each semiconductor body.
A Fin structure comprising:
- a structure having at least one vertically oriented semiconductor body present thereon,
- wherein said at least one vertically oriented semiconductor body has vertical surfaces;
- a doped region present in said at least one vertically oriented semiconductor body that extends inward from said vertical surfaces;
- and
- contacts present on outer portions of said at least one vertically oriented semiconductor body, wherein said doping region and said contacts are of the same dopant type thereby providing a resistor in said at least one vertically oriented semiconductor body.
Dependencies are inferred from the claim text.