Method of improving copper interconnects of semiconductor devices for bonding
OwnerSalman Akraminventor
Life of this patent
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Abstract
An improved wire bond with the bond pads of semiconductor devices and the lead fingers of lead frames or an improved conductor lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.
Claims33
A semiconductor device assembly comprising:
- a semiconductor device having an active surface with at least one bond pad located thereon, the bond pad including:
- a copper layer;
- and
- at least one layer of metal covering a portion of the copper layer;
- and
- one end of a wire connected to the at least one layer of metal covering a portion of the copper layer of the bond pad.
A semiconductor device assembly comprising:
- a semiconductor device having an active surface with at least one bond pad located thereon, the bond pad including:
- a copper layer;
- a barrier layer over at least a portion of the copper layer;
- and
- at least one layer of metal covering a portion of the copper layer and the barrier layer;
- and
- one end of a wire connected to the at least one layer of metal covering a portion of the copper layer of the bond pad.
The semiconductor device of claim 20, wherein the barrier layer comprises one of TaN, TiN, TiW, WN, nickel, nickel alloys, tantalum alloys, and titanium alloys.
A semiconductor device assembly comprising:
- a semiconductor device having an active surface with at least one bond pad located thereon, the bond pad including:
- a copper layer;
- and
- at least one layer of gold metal covering a portion of the copper layer;
- and
- one end of a gold wire connected to the at least one layer of gold metal covering a portion of the copper layer of the bond pad.
A semiconductor device assembly comprising:
- a semiconductor device having an active surface with at least one bond pad located thereon, the bond pad including:
- a copper layer;
- and
- at least one layer of gold metal covering a portion of the copper layer;
- and
- one end of a gold wire connected to the copper layer having at least one layer of gold metal over a portion thereof of the bond pad.
A semiconductor device assembly comprising:
- a semiconductor device having an active surface with at least one bond pad located thereon, the bond pad including:
- a copper layer;
- a barrier layer over at least a portion of the copper layer;
- and
- at least one layer of gold metal covering a portion of the copper layer and the barrier layer;
- and
- one end of a gold wire connected to the barrier layer of the bond pad having at least one layer of
A method of forming a semiconductor device assembly, said method comprising:
- providing a substrate having an upper surface and a lower surface;
- depositing a layer of copper on one surface of the upper surface and the lower surface of the substrate;
- patterning the layer of copper on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon;
- depositing at least one layer of metal on at least a portion of the layer of copper;
- and
- connecting one end of a conductor lead of a TAB tape to the at least one layer of metal.
A method of forming a semiconductor device assembly, said method comprising:
- providing a substrate having an upper surface and a lower surface;
- depositing a layer of copper on one surface of the upper surface and the lower surface of the substrate;
- patterning the layer of copper on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon;
- depositing at least one layer of gold metal on at least a portion of the layer of copper;
- and
- connecting one end of a conductor lead of a TAB tape to the at least one layer of gold metal.
A semiconductor device assembly comprising:
- a semiconductor device having an active surface with at least one bond pad located thereon, the bond pad including:
- a copper layer;
- a barrier layer;
- and
- at least one layer of metal covering a portion of the copper layer;
- and
- one end of a wire connected to the at least one layer of metal covering a portion of the copper layer of the bond pad.
Dependencies are inferred from the claim text.