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US 2003/0141565 A1Published application
Diode
OwnerFumihiko Hirose, Yutaka Soudainventors
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Abstract
A diode of the present invention has a Si substrate, a Si film of a first conductivity type laminated on this Si substrate, and a SiGe film of a second conductivity type laminated on this first conductivity type Si film.
Claims8
A diode comprising:
- a Si substrate,
- a Si film of a first conductivity type laminated on said Si substrate, and
- a SiGe film of a second conductivity type laminated on said first conductivity type Si film
A diode comprising:
- a Si substrate,
- a Si film of a first conductivity type,
- a Si film or high-resistivity Si film which is of said first conductivity type and which has an impurity-doping concentration lower than said first conductivity type Si film, and
- a SiGe film of a second conductivity type which is laminated on said Si film or high-resistivity Si film having said lower impurity-doping concentration.
1 more element
Dependencies are inferred from the claim text.