Incorporating TCS-SiN barrier layer in dual gate CMOS devices
OwnerShi-Chung Suninventor
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Abstract
A method of forming a diffusion barrier layer in a semiconductor device is disclosed. A high-k gate dielectric layer is formed over a substrate. A silicon nitride barrier layer is subsequently formed over the high-k gate dielectric layer by reacting tetrachlorosilane with ammonia through a chemical vapor deposition process. The silicon nitride barrier layer substantially blocks diffusion of impurities from an ensuing overlying gate layer. A semiconductor device comprising the silicon nitride barrier layer, and a method of fabricating such a semiconductor device are also disclosed.
Claims25
A method of forming a diffusion barrier layer in a semiconductor device, comprising the steps of:
- forming a high-k gate dielectric layer over a substrate;
- forming a silicon nitride barrier layer over the high-k gate dielectric layer by reacting tetrachlorosilane with ammonia through a chemical vapor deposition process, whereby the silicon nitride barrier layer blocks diffusion of impurities from a subsequently formed gate layer.
A method of fabricating a semiconductor device on a substrate, comprising the steps of:
- forming a high-k gate dielectric layer over the substrate;
- forming a silicon nitride barrier layer by reacting tetrachlorosilane with ammonia through a chemical vapor deposition process;
- forming a gate electrode layer over the silicon nitride barrier layer;
- patterning the high-k gate dielectric layer, the silicon nitride barrier layer, and the gate electrode layer to form a gate structure;
- and
- forming source and drain regions in the substrate by ion implantation.
A semiconductor device comprising a silicon nitride barrier layer interposed between a gate electrode and a high-k gate dielectric, wherein the silicon nitride barrier layer is formed by reacting tetrachlorosilane with ammonia through a chemical vapor deposition process, whereby the silicon nitride barrier layer blocks diffusion of impurities from the gate electrode.
Dependencies are inferred from the claim text.