Butting contact structure and method incorporating with a silicide inserted between a contact region and a conductor for a small contact window

A salicide butting contact structure comprising:

• a contact region including a first area of a first conductivity type and a second area of a second conductivity type opposite to said first conductivity type surrouding and adjacent to said first area;
• a salicide formed by using a first insulator as a mask and contacting said first and second areas;
• a second insulator covering said salicide;
• a contact window formed in said second insulator and exposing a surface of said salicide;
• and
• a conductor filled in said contact window and contacting said surface of said salicide.

A butting contact method comprising the steps of:

• forming a first area of a first conductivity type and a second area of a second conductivity type opposite to said first conductivity type and adjacent to said first area;
• forming a silicide contacting said first and second areas;
• depositing an insulator on said silicide;
• etching a contact window in said insulator for exposing a surface of said silicide;
• and
• filling a conductor in said contact window for contacting said silicide.

A butting contact method comprising the steps of:

• forming a first area of a first conductivity type and a second area of a second conductivity type opposite to said first conductivity type and surrounding and adjacent to said first area;
• forming a salicide by using a first insulator as a mask and contacting said first and second areas;
• depositing a second insulator on said salicide;
• etching a contact window in said second insulator and exposing a surface of said salicide;
• and
• filling a conductor in said contact window and contacting said surface of said salicide.