SOI semiconductor device and method for producing the same

A method for producing an SOI semiconductor device comprising the steps of:

• preparing an SOI substrate including an insulating film and a semiconductor layer formed on the insulating film;
• forming a gettering layer containing a high concentration impurity selectively in a portion on a surface of the semiconductor layer excluding an element formation intended region in which an active semiconductor element is to be formed;
• performing a heat treatment for facilitating gettering of heavy metals contained in the semiconductor layer after the step of forming the gettering layer or in the same step;
• forming an isolating region in the semiconductor layer such that the element formation intended region is isolated in a form of an island after the heat treatment;
• and
• forming an active semiconductor element in the element formation intended region surrounded by the isolating region.

A method for producing an SOI semiconductor device comprising the steps of:

• preparing an SOI substrate including an SOI active layer made of a semiconductor;
• forming a gettering layer containing a high concentration impurity selectively in a portion on a surface of the SOI active layer excluding an element formation intended region in which an active semiconductor element is to be formed;
• introducing an impurity for forming a well in the element formation intended region on the surface of the SOI active layer after the gettering layer is formed;
• performing a heat treatment so as to drive the impurity in to form a well in the element formation intended region after the gettering layer is formed;
• and
• forming an isolating region in the semiconductor layer such that the element formation intended region is isolated in a form of an island after the heat treatment.

A method for producing an SOI semiconductor device comprising the steps of:

• preparing an SOI substrate including an SOI active layer made of a semiconductor;
• introducing a high concentration impurity so as to form a gettering layer selectively in a portion on a surface of the SOI active layer excluding an element formation intended region in which an active semiconductor element is to be formed;
• introducing an impurity for forming a well in the element formation intended region on the surface of the SOI active layer;
• performing a heat treatment so as to drive the impurity in to form a well in the element formation intended region and to facilitate gettering;
• and
• forming an isolating region in the semiconductor layer such that the element formation intended region is isolated in a form of an island after the heat treatment.

A method for producing an SOI semiconductor device comprising the steps of:

• preparing an SOI substrate including an insulating film and a semiconductor layer formed on the insulating film;
• forming a gettering layer containing a high concentration impurity in a portion on a surface of the semiconductor layer excluding an element formation intended region in which an active semiconductor element is to be formed;
• selectively introducing an impurity for forming a well in the element formation intended region and then performing a heat treatment so as to form a well;
• forming an isolating region surrounding the element formation intended region of the semiconductor layer such that the gettering layer is not included in the element formation intended region;
• and
• forming an active semiconductor element in the element formation intended region.

An SOI semiconductor device comprising at least an SOI substrate including an insulating film and a semiconductor layer formed on the insulating film;

• and
• an active semiconductor element formed on the semiconductor layer,
• wherein the active semiconductor element is formed in an element formation region surrounded by an isolating region for isolating the semiconductor layer in a form of an island, and
• a gettering layer for capturing a heavy metal in the semiconductor layer is formed in a portion of the semiconductor layer excluding the element formation region in which the active semiconductor element is formed, and the gettering layer is not formed in the element formation region in which the active semiconductor element is formed.