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AssigneeHitachi, Ltd.
InventorsYoshitaka Nakamura, Isamu Asano, Shinpei Iijima, Masahiko Hiratani, Hiroshi Sakuma
Estimating the term…
Disclosed are a semiconductor integrated circuit device and a method of manufacturing the same capable of improving the characteristics of the semiconductor integrated circuit device by reducing a leakage current of a capacitor used in a DRAM memory cell. A data storage capacitor connected to a data transfer MISFET in a memory cell forming area via plugs is formed in the following manner. That is, a lower electrode composed of an Ru film is formed in a hole in a silicon oxide film, and then, a tantalum oxide film is deposited on the lower electrode. Thereafter, a first thermal treatment in an oxidizing atmosphere is performed to the film at a temperature sufficient to repair an oxygen defect and having no influence on the materials below the tantalum oxide film. Further, a second thermal treatment in an inactive atmosphere is performed at a temperature at which the tantalum oxide film is not completely crystallized (650° C.) and higher than that applied in the later process. Thereafter, an upper electrode composed of a laminated film of an Ru film and a W film is formed on the capacitor insulating film made from the tantalum oxide film.
A semiconductor integrated circuit device comprising a capacitor comprising a lower electrode, a dielectric film, and an upper electrode,
A semiconductor integrated circuit device comprising a capacitor comprising a lower electrode, a dielectric film, and an upper electrode,
A semiconductor integrated circuit device comprising a capacitor comprising a lower electrode, a dielectric film, and an upper electrode,
A semiconductor integrated circuit device comprising a capacitor comprising a lower electrode, a dielectric film made from a tantalum oxide film, and an upper electrode,
A semiconductor integrated circuit device comprising a capacitor comprising a lower electrode, a dielectric film made from a tantalum oxide film, and an upper electrode,
A method of manufacturing a semiconductor integrated circuit device comprising a capacitor comprising a lower electrode, a dielectric film, and an upper electrode,
A method of manufacturing a semiconductor integrated circuit device comprising a capacitor comprising a lower electrode, a tantalum oxide film, and an upper electrode,
A method of manufacturing a semiconductor integrated circuit device comprising a capacitor composed of a lower electrode, a tantalum oxide film, and an upper electrode,
Dependencies are inferred from the claim text.