Organic semiconductor device and method
AssigneeMotorola, Inc.
InventorsSteven M. Scheifers, Daniel R. Gamota, Paul W. Brazis JR., Jie Zhang, Lawrence E. Lach
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprising a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.
Claims42
A device comprising:
- a substrate;
- at least one electrode comprising a conductor disposed on the substrate;
- a dielectric layer comprising an oxide layer formed on an exterior surface of the at least one electrode;
- an organic semiconductor layer disposed over at least a portion of the dielectric layer, wherein at least one of the conductor, dielectric layer, and organic semiconductor is printed.
A metal oxide semiconductor field effect transistor comprising:
- a substrate;
- an electrode comprising a gate printed on the substrate;
- a dielectric comprising an oxide formed on the electrode;
- an organic semiconductor material disposed over the dielectric.
A method of forming a metal oxide semiconductor field effect transistor comprising:
- providing a substrate;
- forming a gate electrode on the substrate;
- oxidizing at least a portion of a surface of the gate electrode to thereby form a thin dielectric layer;
- forming an organic semiconductor layer over at least a portion of the thin dielectric layer.
Dependencies are inferred from the claim text.