Semiconductor device and equipment for communication system
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsToshiya Yokogawa, Asamira Suzuki, Masahiro Deguchi, Shigeo Yoshii, Hiroyuki Furuya
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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsToshiya Yokogawa, Asamira Suzuki, Masahiro Deguchi, Shigeo Yoshii, Hiroyuki Furuya
Estimating the term…
A HEMT has an InAlAs layer (202), an InGaAs layer (203), a multiple δ-doped InAlAs layer (204) composed of n-type doped layers (204a) and undoped layers (204b) which are alternately stacked, an InP layer (205), a Schottky gate electrode (210), a source electrode (209a), and a drain electrode (209b) on an InP substrate (201). When a current flows in a region (channel region) of the InGaAs layer (203) adjacent the interface between the InGaAs layer (203) and the multiple δ-doped InAlAs layer (204), a breakdown voltage in the OFF state can be increased, while resistance to the movement of carriers passing through the multiple δ-doped InAlAs layer (204) as a carrier supplying layer is reduced.
A semiconductor device comprising:
Equipment for a communication system handling an RF signal, the equipment being disposed in the communication system and having an active element formed by using a semiconductor, the active element comprising:
Dependencies are inferred from the claim text.