Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode

A method for producing a boron-phosphide-based semiconductor light-emitting device comprising successively forming, on a semiconductor substrate of first conduction type, a first boron-phosphide-based semiconductor layer of a first conduction type, a Group III-V compound semiconductor active layer, and a second boron-phosphide-based semiconductor layer of a second conduction type;

• forming a bottom electrode on the bottom surface of the semiconductor substrate;
• and
• forming a lower electrode containing a metal incapable of establishing ohmic contact with the second boron-phosphide-based semiconductor layer in direct contact with the second boron-phosphide-based semiconductor layer, and
• subsequently forming an upper electrode containing a metal capable of establishing ohmic contact with the second boron-phosphide-based semiconductor layer on the lower electrode so that a portion of the upper electrode contacts the surface of the second boron-phosphide-based semiconductor layer,
• wherein the lower electrode and upper electrode form a top electrode on the surface of the second boron-phosphide-based semiconductor layer.

A light-emitting diode comprising a boron-phosphide-based semiconductor light-emitting device comprising:

• a semiconductor substrate of a first conduction type having, on its bottom surface, a bottom electrode;
• a first boron-phosphide-based semiconductor layer of a first conductive type provided on the substrate;
• a Group III-V compound semiconductor active layer provided on the first boron-phosphide-based semiconductor layer;
• a second boron-phosphide-based semiconductor layer of second conduction type provided on the active layer;
• and a top electrode provided on the surface of the second boron-phosphide-based semiconductor layer,
• wherein the top electrode includes a lower electrode and an upper electrode, the lower electrode is in direct contact with the second boron-phosphide-based semiconductor layer and formed of a metal incapable of establishing ohmic contact with the second boron-phosphide-based semiconductor layer, and the upper electrode is provided on the lower electrode and formed of a metal capable of establishing ohmic contact with the second boron-phosphide-based semiconductor layer,
• wherein a portion of the upper electrode is in contact with the surface of the second boron-phosphide-based semiconductor layer.