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AssigneeNichia Corporation
InventorsMasahiko Sano, Mitsuhiro Nonaka, Kazumi Kamada, Masashi Yamamoto
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The present invention provides a high efficient nitride semiconductor element having an opposed terminal structure, whose terminals facing each other, and a method for producing thereof. The nitride semiconductor element includes a conductive layer, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal, on a supporting substrate successively. The first terminal and a first insulating protect layer are interposed between the conductive layer and a first conductive type nitride semiconductor layer. The method includes: a growing step for growing the nitride semiconductor further having an undoped GaN layer on a different material substrate; subsequently, a attaching step for attaching the supporting substrate to the first conductive type nitride semiconductor layer side of the nitride semiconductor with interposing the first terminal between them; and subsequently, an exposing step for exposing the second conductive type nitride semiconductor layer by eliminating the different material substrate and the undoped GaN.
A nitride semiconductor element comprising,
The nitride semiconductor according to claim 5, wherein the nitride semiconductor layers except the light-emitting layer in the nitride semiconductor have a band gap larger than the light-emission band gap.
A method for producing a nitride semiconductor element having at least a conductive layer, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal, from a supporting substrate successively, comprising:
A method for producing a nitride semiconductor element having at least a conductive layer, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal, from a supporting substrate successively, comprising:
Dependencies are inferred from the claim text.