Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a crystalline semiconductor formed over an insulating surface, contacting a pair of impurity regions of one conductivity type, having at least two crystal orientations and having at least two crystal grains which extend in a direction parallel to a channel length direction without forming a grain boundary,
• wherein the semiconductor device has a structure in which a channel is formed by the crystalline semiconductor film and a conductive layer overlapping the crystalline semiconductor film with an insulating layer interposed therebetween,
• wherein the crystalline semiconductor film is equal to or more than 0.01 μm and equal to or less than 2 μm in channel width direction, and has a thickness of equal to or more than 0.01 μm and equal to or less than 1 μm, and
• wherein the crystalline semiconductor film is in an opening that is as deep as the thickness of the crystalline semiconductor film.

A semiconductor device comprising:

• a crystalline semiconductor formed over an insulating surface, contacting a pair of impurity regions of one conductivity type, having at least two crystal orientations and having at least two crystal grains which extend in a direction parallel to a channel length direction without forming a grain boundary,
• wherein the semiconductor device has a structure in which a channel is formed to a top face and side faces of the crystalline semiconductor film by the crystalline semiconductor film and a gate electrode overlapping the crystalline semiconductor film with a gate insulating film interposed therebetween,
• wherein the crystalline semiconductor film is equal to or more than 0.01 μm and equal to or less than 2 μm in channel width direction, and has a thickness of equal to or more than 0.01 μm and equal to or less than 1 μm, and
• wherein the crystalline semiconductor film is in an opening that is as deep as the thickness of the crystalline semiconductor film.

A semiconductor device comprising:

• a crystalline semiconductor formed over an insulating surface, contacting a pair of impurity regions of one conductivity type, having at least two crystal orientations and having at least two crystal grains which extend in a direction parallel to a channel length direction without forming a grain boundary,
• wherein the semiconductor device has a structure in which a channel is formed to a top face and side faces of the crystalline semiconductor film by the crystalline semiconductor film and a gate electrode overlapping the crystalline semiconductor film with a gate insulating film interposed therebetween,
• wherein the crystalline semiconductor film is equal to or more than 0.01 μm and equal to or less than 2 μm in channel width direction, and has a thickness of equal to or more than 0.01 μm and equal to or less than 1 μm,
• wherein the crystalline semiconductor film is in an opening that is as deep as the thickness of the crystalline semiconductor film, and
• wherein one or more of the crystalline semiconductor film are provided between the pair of impurity regions of one conductivity type.

A method of manufacturing a semiconductor device, comprising:

• forming an insulating film on a substrate, the substrate having an insulating surface, and the insulating film having an opening;
• forming an amorphous semiconductor film on the insulating film and over the opening;
• crystallizing the amorphous semiconductor film to form a crystalline semiconductor film by melting the amorphous semiconductor film and pouring the melted semiconductor into the opening of the insulating film;
• removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening;
• and
• forming a gate insulating film and a gate electrode, the gate insulating film being in contact with the top face of the remaining crystalline semiconductor film.

A method of manufacturing a semiconductor device, comprising:

• forming an insulating film on a substrate, the substrate having an insulating surface, and the insulating film having an opening;
• forming an amorphous semiconductor film on the insulating film and over the opening;
• crystallizing the amorphous semiconductor film to form a crystalline semiconductor film by melting the amorphous semiconductor film by irradiation of laser light and pouring the melted semiconductor into the opening of the insulating film;
• removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening;
• and
• forming a gate insulating film and a gate electrode, the gate insulating film being in contact with the top face of the remaining crystalline semiconductor film.

A method of manufacturing a semiconductor device, comprising:

• forming an insulating film on a substrate, the substrate having an insulating surface, and the insulating film having an opening that extends in the channel length direction;
• forming an amorphous semiconductor film on the insulating film and over the opening;
• crystallizing the amorphous semiconductor film to form a crystalline semiconductor film by running laser light over the amorphous semiconductor film in the direction parallel to the channel length direction in order to melt the amorphous semiconductor film and pour the melted semiconductor into the opening of the insulating film;
• removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening;
• and
• forming a gate insulating film and a gate electrode, the gate insulating film being in contact with the top face of the remaining crystalline semiconductor film.

A method of manufacturing a semiconductor device, comprising:

• forming an insulating film on a substrate, the substrate having an insulating surface, the insulating film having an opening that is positioned in accordance with an island-like semiconductor film, and the island-like semiconductor film including a channel formation region of a thin film transistor;
• forming an amorphous semiconductor film on the insulating film and over the opening;
• crystallizing the amorphous semiconductor film to form a crystalline semiconductor film by running laser light over the amorphous semiconductor film in the direction parallel to the channel length direction of the thin film transistor in order to melt the amorphous semiconductor film and pour the melted semiconductor into the opening of the insulating film;
• removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening;
• and
• forming a gate insulating film and a gate electrode, the gate insulating film being in contact with the top face of the remaining crystalline semiconductor film.