Semiconductor device and manufacturing method thereof

A semiconductor device comprising a CMOS circuit disposed over an insulating surface, said semiconductor device comprising:

• an N-channel type TFT having a first semiconductor layer as an active layer,
• an insulating film over said first semiconductor layer;
• a P-channel type TFT having a second semiconductor layer as a active layer over the insulating film,
• wherein said N-channel type TFT and said P-channel type TFT are connected complementally to each other,
• only said insulating film is provided between said first semiconductor layer and said second semiconductor layer,
• a gate insulating film of said P-channel type TFT and a gate electrode are provided over said semiconductor layer,
• a gate insulating film of said N-channel type TFT and a gate electrode are provided under said first semiconductor layer,
• a part of said first semiconductor layer is overlapped with a part of said second semiconductor layer with said insulating film sandwiched therebetween.

A semiconductor device comprising a CMOS circuit disposed over an insulating surface, said semiconductor device comprising:

• an P-channel type TFT having a first semiconductor layer as an active layer, and an insulating film over said first semiconductor layer;
• a N-channel type TFT having a second semiconductor layer as a active layer over the insulating film,
• wherein said P-channel type TFT and said N-channel type TFT are connected complementally to each other,
• only said insulating film is provided between said first semiconductor layer and said second semiconductor layer,
• above said second semiconductor layer, a gate insulating film of said N-channel type TFT and a gate electrode are provided over said second semiconductor layer,
• a gate insulating film of said P-channel type TFT and a gate electrode are provided under said first semiconductor layer,
• a part of said first semiconductor layer is overlapped with a part of said second semiconductor layer with said insulating film sandwiched therebetween.

A semiconductor device comprising an organic light emitting device disposed over an insulating surface, said semiconductor device comprising:

• an N-channel type TFT having a first semiconductor layer as an active layer, an insulating film over said first semiconductor layer;
• a P-channel type TFT having a second semiconductor layer as a active layer over the insulating film,
• said P-channel type TFT is connected to the organic light emitting device,
• only said insulating film is provided between said first semiconductor layer and said second semiconductor layer,
• a gate insulating film of said P-channel type TFT and a gate electrode are provided over said second semiconductor layer,
• below said first semiconductor layer, a gate insulating film of said N-channel type TFT and a gate electrode are provided under said first semiconductor layer,
• a part of said first semiconductor layer is overlapped with a part of said second semiconductor layer with said insulating film sandwiched therebetween.

A semiconductor device comprising a CMOS circuit disposed on an insulated surface, wherein

• an N-channel type TFT having a first semiconductor layer as an active layer, an insulating film on said first semiconductor layer and a P-channel type TFT having a second semiconductor layer as a active layer on the insulating film are connected complementally to each other,
• between said first semiconductor layer and said second semiconductor layer, said insulating film only is included,
• above said second semiconductor layer, a gate insulating film and a gate electrode are included,
• said gate electrode of said N-channel type TFT and said P-channel type TFT is the identical,
• a part of said first semiconductor layer is overlapped with a part of said second semiconductor layer with said insulating film sandwiched therebetween.

A semiconductor device comprising a TFT having a plurality of channel forming areas disposed on an insulated surface, wherein

• the TFT includes a first semiconductor layer and a second semiconductor layer as active layers,
• said first semiconductor layer and said second semiconductor layer are electrically connected to each other via electrodes,
• between said first semiconductor layer and said second semiconductor layer, an insulating film only is included,
• on said second semiconductor layer, a gate insulating film of the TFT, and on the gate insulating film, a gate electrode are included,
• in said second semiconductor layer, an area where is overlapped with said gate electrode with said gate insulating film sandwiched therebetween is a second channel forming area,
• in said first semiconductor layer, an area where is overlapped with said gate electrode with said gate insulating film, said second channel forming area and said insulating film sandwiched therebetween is a first channel forming area.

A manufacturing method of semiconductor device, comprising:

• forming a first semiconductor film having amorphous structure over an insulating surface,
• forming an insulating film over the semiconductor film,
• forming a second semiconductor film having amorphous structure over the insulating film,
• irradiating a laser beam to said first semiconductor film having amorphous structure and said second semiconductor film having amorphous structure to form a first semiconductor film having crystal structure and a second semiconductor film having crystal structure simultaneously.

A manufacturing method of semiconductor device, comprising:

• forming a first semiconductor film having amorphous structure over an insulating surface,
• forming an first insulating film over the semiconductor film,
• forming a second semiconductor film having amorphous structure over the first insulating film,
• irradiating a laser beam to said second semiconductor film having amorphous structure by allowing the same to pass through said first semiconductor film having amorphous structure and said first insulating film to form a first semiconductor film having crystal structure and a second semiconductor film having crystal structure simultaneously,
• forming a second insulating film over the second semiconductor film having crystal structure,
• forming a gate electrode over said second insulating film,
• adding an impurity element for imparting N-type or P-type to said first semiconductor film having crystal structure or said second semiconductor film having crystal structure using said gate electrode as a mask.

A manufacturing method of semiconductor device, comprising:

• forming a first gate electrode over an insulating surface,
• forming a first insulating film for covering said first gate electrode,
• forming a first semiconductor film having amorphous structure over said first insulating film,
• forming a second insulating film over the semiconductor film,
• forming a second semiconductor film having amorphous structure over the second insulating film,
• irradiating a laser beam to said second semiconductor film having amorphous structure by allowing the same to pass through said first semiconductor film having amorphous structure and said second insulating film to form a first semiconductor film having crystal structure and a second semiconductor film having crystal structure simultaneously,
• forming a third insulating film over the second semiconductor film having crystal structure,
• forming a second gate electrode over said third insulating film,
• adding an impurity element for imparting N-type or P-type to said first semiconductor film having crystal structure or said second semiconductor film having crystal structure using said second gate electrode as a mask.