Polycrystalline silicon thin film for a thin film transistor and display device using the same

Abstract

A polycrystalline silicon thin film for a TFT and a display device using the same where the number of crystal grain boundaries exerts a fatal influence on movement of electric charge carrier, providing a distance “S” between active channels of the TFT having dual or multiple channels with a relation S=mGs·sec θ−L, and also providing a display device in which uniformity of TFT characteristics is improved by synchronizing the number of the crystal grain boundaries included in each of the channels of the dual or multiple channels S=mGs·sec θ−L Gs is a size of crystal grains of the polycrystalline silicon thin film, m is an integer of 1 or more, θ is an inclined angle where fatal crystal grain boundaries, that is, “primary” crystal grain boundaries are inclined in a direction perpendicular to an active channel direction, and L represents a length of active channels for each TFT having dual or multiple channels.

Dependencies are inferred from the claim text.