Semiconductor integrated circuit device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsHiroshi Komurasaki, Kazuya Yamamoto, Hisayasu Satoh, Hideyuki Wakada
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Abstract
A semiconductor device is arranged by having a shield/planarization portion including a silicided active region formed on the main surface of a semiconductor substrate and a non-active region provided by device-isolation on the surface, and a metal layer such as a pad, wiring layer or inductor having a predetermined pattern, formed on an interlayer insulation film formed on the above shield/planarization portion. Just under the metal layer is disposed the shield/planarization portion in which the area ratio of the active region to the non-active region is given in a predetermined proportion and the active region is electrically grounded.
Claims15
A semiconductor integrated circuit device comprising:
- a semiconductor substrate including a silicided active region formed on the main surface thereof and a non-active region provided by device-isolation on the same surface;
- an interlayer insulation film formed on the substrate;
- and
- a conductor pad formed in a predetermined-patterned shape on the insulation film,
- wherein a shield/planarization portion in which an area ratio of the active region to the non-active region is given in a predetermined proportion and the active region is electrically grounded is disposed between the semiconductor substrate and the insulation film just under the pad.
A semiconductor integrated circuit device comprising:
- a semiconductor substrate including a silicided active region formed on the main surface thereof and a non-active region provided by device-isolation on the same surface;
- an interlayer insulation film formed on the substrate;
- and
- a conductor wiring layer formed in a predetermined-patterned shape on the insulation film,
- wherein a shield/planarization portion in which the area ratio of the active region to the non-active region is given in a predetermined proportion and the active region is electrically grounded is disposed between the semiconductor substrate and the insulation film just under the wiring layer.
A semiconductor integrated circuit device comprising:
- a semiconductor substrate including a silicided active region formed on the main surface thereof and a non-active region provided by device-isolation on the same surface;
- an interlayer insulation film formed on the substrate;
- and
- a conductor inductor formed in a predetermined-patterned shape on the insulation film,
- wherein a shield/planarization portion in which the area ratio of the active region to the non-active region is given in a predetermined proportion and the active region is electrically grounded is disposed between the semiconductor substrate and the insulation film just under the inductor.
Dependencies are inferred from the claim text.