Materials having low dielectric constants and method of making
AssigneeNV Bekaert SA
InventorsChandra Venkatraman, Cyndi L Brodbeck
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Abstract
The invention relates to a material including carbon, oxygen, silicon and hydrogen and having a dielectric constant of from about 2.1 to about 3.0 where an FTIR scan of the material includes at least two major peaks signifying Si—CH3 bonding. The invention further relates to a material which has a variable dielectric constant through the thickness of the material. Another aspect of the invention is the method of making the material.
Claims42
A material comprising carbon, oxygen, silicon and hydrogen having a dielectric constant of from about 2.1 to about 3.0 wherein a FTIR scan of the material includes at least two major peaks signifying Si—CH3 bonding.
A material comprising carbon, oxygen, silicon and hydrogen having an upper surface and a lower surface and having a dielectric constant from about 2.1 to about 4.0, wherein the dielectric constant of the lower surface is from about 2.1 to about 2.7 and the dielectric constant of the upper surface is greater than 3.0.
A method of making a dielectric material comprising:
- providing at least one organosilicon precursor and
- depositing the dielectric material on a substrate having a surface by chemical vapor deposition, wherein the precursor reacts and deposits the dielectric material on the surface of the substrate, wherein said depositing occurs at a power density of from about 40 to less than 200 W/ft3.
Dependencies are inferred from the claim text.