Light-receiving device and light-receiving module comprising it

A light-receiving device comprising:

• a substrate having a low impurity concentration;
• a layer having a short carrier life time formed on a bottom surface of the substrate;
• a high-concentration impurity layer of a first conductivity type formed on a top-surface side of the substrate so as to have a predetermined thickness;
• a high-concentration impurity layer of a second conductivity type formed on the top-surface side of the substrate so as to surround the high-concentration impurity layer of the first conductivity type, the high-concentration impurity layers of the first and second conductivity types together functioning as a light-receiving portion;
• an insulating layer formed on a top surface of the substrate;
• and
• an electrode formed on the insulating layer and kept at an identical potential with the high-concentration impurity layer of the first conductivity type so as to shield the high-concentration layer of the second conductivity type.

A light-receiving module comprising a lead frame, a light-receiving device fixed on the lead frame, and an insulating resin in which the lead frame and the light-receiving device are integrally sealed,

• wherein the light-receiving device comprises:
• a substrate having a low impurity concentration;
• a layer having a short carrier life time formed on a bottom surface of the substrate;
• a high-concentration impurity layer of a first conductivity type formed on a top-surface side of the substrate so as to have a predetermined thickness;
• a high-concentration impurity layer of a second conductivity type formed on the top-surface side of the substrate so as to surround the high-concentration impurity layer of the first conductivity type, the high-concentration impurity layers of the first and second conductivity types together functioning as a light-receiving portion;
• an insulating layer formed on a top surface of the substrate;
• and
• an electrode formed on the insulating layer and kept at an identical potential with the high-concentration impurity layer of the first conductivity type so as to shield the high-concentration layer of the second conductivity type,
• and the layer having a short carrier life time is fixed on the lead frame with an insulating material.