Laser irradiation apparatus, laser irradiation method, and manufacturing method for a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKoichiro Tanaka, Tomoaki Moriwaka
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Abstract
The laser irradiation apparatus of the present invention is configured to include a laser and at least two mirrors each having a concave surface for unidirectionally homogenizing an energy density of laser light emitted from the laser. A focal position of a first mirror exists between the first mirror and an irradiation surface. A focal position of a second mirror does not exist between the second mirror and the irradiation surface, but exists behind the irradiation surface. The laser irradiation apparatus thus configured enables laser irradiation of, for example, semiconductor films.
Claims13
A laser irradiation apparatus comprising:
- a laser;
- a plurality of mirrors each having a concave surface;
- and
- a stage for supporting an object having a surface to be irradiated with laser beams reflected by the plurality of mirrors, the plurality of mirrors comprising:
- a first mirror wherein a focal position exists between the surface to be irradiated and the plurality of mirrors;
- and
- a second mirror wherein a focal position exists on an opposite side of the plurality of mirrors with respect to the surface to be irradiated.
A laser irradiation method comprising:
- splitting a laser beam into a plurality of laser beams by using a plurality of mirrors each having a concave surface;
- and
- irradiating the plurality of laser beams to an irradiation surface,
- wherein the plurality of mirrors are separated into two mirror groups, wherein:
- a first mirror group converges laser beams between the irradiation surface and the plurality of mirrors;
- and
- a second mirror group converges laser beams on an opposite side of the plurality of mirrors with respect to the irradiation surface.
A method for manufacturing a semiconductor device comprising:
- forming an amorphous semiconductor film over a substrate having an insulation surface;
- and
- crystallizing the amorphous semiconductor film by irradiating a laser beam overlapped on an irradiation surface
- emitting a laser beam from a laser;
- splitting the laser beam into a plurality of laser beams by using a plurality of mirrors each having a concave surface, wherein the plurality of mirrors are separated into two mirror groups having different focal positions with each other;
- and
- irradiating the amorphous semiconductor film with the plurality of laser beams overlapped on an irradiation surface.
Dependencies are inferred from the claim text.