Methods and systems for forming slots in a substrate

A method of forming fluid handling slots in a semiconductor substrate having a thickness between opposing first and second surfaces comprising:

• dry etching into the substrate from the first surface to form a first trench having a length and a width;
• and,
• removing substrate material through the second surface to form a second trench, wherein at least a portion of the first and second trenches intersect to form a slot through the substrate, and wherein the slot has an aspect ratio of greater than or equal to about 3.

A method of forming slots in a semiconductor substrate having first and second opposing surfaces comprising:

• dry etching a first trench through the first surface of the substrate;
• and,
• creating a second trench through the second surface of the substrate effective to form, in combination with the first trench, a slot at least a portion of which passes entirely through the substrate, wherein the maximum width of the slot is less than or equal to about 50 percent of the thickness of the substrate.

One or more computer-readable media having computer readable instructions thereon which, when executed by a computer, cause the computer to:

• cause material to be removed from either the first or second surfaces of a semiconductor substrate;
• and,
• cause a dry etch to be made through the other of the first or second surfaces of a semiconductor substrate effective to form in combination with said removed material, a slot to be formed, at least a portion of which passes entirely through the substrate and wherein the slot has a maximum width that is less than or equal to about 50 percent of the thickness of the substrate.