Apparatus and method for integral bypass diode in solar cells

A solar cell structure comprising:

• at least one solar cell disposed over a germanium (“Ge”) substrate;
• a lateral conduction layer deposited over a portion of the solar cell structure;
• a bypass diode deposited over the lateral conduction layer;
• and
• a shunt having a first and second contacting sides formed between the solar cell and the bypass diode, wherein the first contacting side of the shunt is connected to the substrate and the second contacting side of the shunt is connected to the lateral conduction layer.

A method for manufacturing a solar device comprising:

• depositing a germanium (“Ge”) substrate;
• depositing a solar cell having multiple junctions on the Ge substrate;
• depositing a lateral conduction layer on the solar cell;
• depositing a bypass diode over the lateral conduction layer;
• etching a well between the bypass diode and the solar cell;
• and
• depositing a shunt between the Ge substrate and the bypass diode through the well, wherein one side of the shunt is connected to the Ge substrate and another side of the shunt is connected to the lateral conduction layer.