Clean equipment for removing polymer residues on sidewalls of metal lines and method thereof

A clean station for removing polymer residues on sidewalls of metal lines, comprising:

• a first stop provided with a stripping solution bath for removing polymer residues on sidewalls of metal lines formed on a wafer;
• a second stop provided with a first organic solvent bath for removing the stripping solution left on the wafer, said first organic solvent bath being provided with a gas bubbler for providing gas flow and a lattice-like cassette stage for supporting cassettes for carrying the wafers, said gas bubbler positioned on the bottom of said first organic solvent bath within said first organic solvent bath and said lattice-like cassette stage positioned over said gas bubbler, wherein said gas bubbler comprises a main flow tube and at least two branching tubes, each said branching tube provided with a plurality of pairs of side flow tubes, and each said branching tube vertically communicated with said main flow tube, each pair of said side flow tubes correspondingly and vertically communicated with two opposite sides of said branching tube and parallel with said main flow tube, and a bubbling aperture of each said side flow tube positioned under a lattice of said lattice-like wafer carrier;
• a third stop provided with an overflow bath for providing water flow to remove away the first organic solvent and the stripping solution left on the wafer;
• and
• a fourth stop provided with a dryer for drying water left on the wafer.

A method for removing polymer residues on sidewalls of metal lines, comprising:

• providing a wafer with at least a metal line layer formed thereon, the sidewalls of the metal lines of the metal line layer having polymer residues formed thereon;
• immersing said wafer in a stripping solution for removing the polymer residues in accordance with a first immersion time;
• removing said wafer from said stripping solution and maintaining for a first time so that said stripping solution left on said wafer drips down;
• immersing said wafer in a first organic solvent for removing said stripping solution left on said wafer in accordance with a second immersion time;
• removing said wafer from said first organic solvent and maintaining for a second time so that said striping solution and said first organic solvent left on said wafer drip down;
• immersing said wafer in a water flow for removing the stripping solution and said first organic solvent left on said wafer in accordance with a third immersion time;
• and
• removing water left on said wafer in accordance with a predetermined time.