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US 2003/0140945 A1Published application
Substrate processing apparatus
AssigneeTokyo Electron Limited
InventorYasuhiro Chono
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AssigneeTokyo Electron Limited
InventorYasuhiro Chono
Estimating the term…
A substrate processing apparatus and a substrate processing method are provided wherein particles etc. adhering to a substrate after processing can be reduced. According to a substrate processing apparatus 23a in which processing is performed to a substrate placed inside a chamber 45 by supplying ozone gas and steam to the substrate, said chamber 45 is cleaned by supplying ozone water into said chamber 45. Moreover, according to a substrate processing method for processing a substrate W by supplying ozone gas to the substrate W, a substrate W is placed inside the chamber 45, and the substrate W is processed by supplying ozone gas and steam to said substrate W, and then the substrate W is unloaded from said chamber 45, and after that, said chamber 45 is cleaned by supplying ozone water into said chamber 45.
A substrate processing apparatus wherein a substrate placed inside a chamber is processed by supplying ozone gas and steam to the substrate, and characterized by supplying ozone water into said chamber to clean said chamber.
A substrate processing method for processing a substrate by supplying a processing fluid including ozone gas to the substrate, said method being characterized by comprising:
A substrate processing method for processing a substrate by supplying a processing fluid including ozone gas to the substrate, said method being characterized by comprising:
Dependencies are inferred from the claim text.