System and method for inspecting a mask
OwnerMichael R. Sogardinventor
Life of this patent
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Abstract
An inspection system (100) for inspecting a mask (101) to determine if the mask (101) has at least one desired transparent area (902) organized in a desired transparent pattern (908) and at least one desired opaque area (900) organized in a desired opaque pattern (906). The mask (101) includes an actual mask pattern (103C) having at least one actual transparent area (103A) and at least one actual opaque area (103B). In one embodiment, the inspection system can include a beamlet supply assembly (111) that (i) directs a shaped beamlet towards one of the actual areas (103A, 103B) of the mask (101), and/or (ii) directs a plurality of beamlets simultaneously towards the mask (101).
Claims142
An inspection system for inspecting a mask to determine if the mask has at least one desired transparent area organized in a desired transparent pattern and at least one desired opaque area organized in a desired opaque pattern, the mask including at least one actual transparent area and at least one actual opaque area, the inspection system comprising:
- a beamlet supply assembly that directs a shaped beamlet towards one of the actual areas of the mask, the shaped beamlet having a beamlet characteristic that corresponds to a desired characteristic of one of the desired areas.
An inspection system for inspecting a mask to determine if the mask has a plurality of desired transparent areas organized in a desired transparent pattern and a plurality of desired opaque areas organized in a desired opaque pattern, the mask including a plurality of actual transparent areas and a plurality of actual opaque areas, the inspection system comprising:
- a beamlet supply assembly that directs a selectable plurality of spaced apart beamlets substantially simultaneously at the mask.
An inspection system for inspecting a mask, the inspection system comprising:
- a source of electrons;
- a stage supporting the mask;
- a beamlet shaping section disposed between the source of electrons and the mask, the beamlet shaping section including a first multi-aperture array having apertures with a first shape and a second multi-aperture array having apertures with a second shape;
- a beamlet blanking section disposed between the beamlet shaping section and the mask;
- a first electron lens group directing electrons emitted from the source of electrons into a collimated beam in an axial direction towards the first multi-aperture array;
- a second electron lens group directing each beamlet in the array of electron beamlets formed by the first multi-aperture array towards the center of a corresponding aperture in the second multi-aperture array;
- an electron deflector disposed between the first multi-aperture array and the second multi-aperture array;
- and
- a detector assembly that measures electrons to inspect the mask.
A method for inspecting a mask to determine if the mask has at least one desired transparent area organized in a desired transparent pattern and at least one desired opaque area organized in a desired opaque pattern, the mask including at least one actual transparent area and at least one actual opaque area, the method comprising the step of:
- directing a shaped beamlet from a beamlet supply assembly towards one of the actual areas of the mask, the shaped beamlet having a beamlet characteristic that corresponds to a desired characteristic of one of the desired areas.
A method for inspecting a mask to determine if the mask has a plurality of desired transparent areas organized in a desired transparent pattern and a plurality of desired opaque areas organized in a desired opaque pattern, the mask including a plurality of actual transparent areas and a plurality of actual opaque areas, the method comprising the step of:
- directing a plurality of spaced apart, selectable beamlets from a beamlet supply assembly substantially simultaneously at the mask.
A method for inspecting a device with electrons, the method comprising the steps of:
- generating electrons;
- directing the electrons in a collimated beam in an axial direction towards the device;
- directing the collimated beam of electrons through a beamlet shaping section comprising a first multi-aperture array having M rows and N columns of apertures having a first shape, a second multi-aperture array having M rows and N columns of apertures having a second shape;
- directing the electrons emerging from the beamlet shaping section through a beamlet blanking section;
- directing electron beamlets having the first shape formed by the first multi-aperture array towards the center of corresponding apertures in the second multi-aperture array;
- deflecting each of the electron beamlets formed by the first multi-aperture array away from the center of the corresponding aperture in the second multi-aperture array;
- and
- measuring electrons with a detector assembly to inspect the device.
Dependencies are inferred from the claim text.