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US 2003/0119427 A1Published application
Temprature compensated chemical mechanical polishing apparatus and method
OwnerSudhanshu Rid Misrainventor
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OwnerSudhanshu Rid Misrainventor
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A chemical mechanical polishing (CMP) system (22) having a radiant heating apparatus (30) for direct radiant heating of the polishing surface (26) of the polishing pad (16). Radiant energy (28) is impinged onto a selected area of the polishing surface to provide temperature compensation of the material removal rate across the surface (24) of the wafer (14). The radiant energy may be in the form of infrared radiation, a laser beam or microwave energy. The power level, angle of impingement, duration of exposure and footprint of the radiant energy may be controlled to achieve a desired temperature gradient on the polishing surface. The temperature of the polishing surface may further be regulated by impinging a temperature conditioning gas (32) onto the polishing surface.
A device for polishing a wafer, the device comprising:
A device for polishing a wafer, the device comprising:
A method of polishing a wafer, the method comprising:
A method of polishing a wafer, the method comprising:
Dependencies are inferred from the claim text.