Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article

A planarization method comprising:

• providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface;
• providing a fixed abrasive article;
• providing a planarization composition at an interface between the at least one region of platinum-containing surface and the fixed abrasive article;
• and
• planarizing the at least one region of platinum-containing surface with the fixed abrasive article;
• wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.

A planarization method comprising:

• providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface having a nonplanar topography;
• providing a fixed abrasive article;
• providing a planarization composition at an interface between the at least one region of platinum-containing surface and the fixed abrasive article;
• and
• planarizing the at least one region of platinum-containing surface with the fixed abrasive article;
• wherein the fixed abrasive article comprises a plurality of abrasive particles selected from the group of CeO2, Y2O3, Fe2O3, and combinations thereof.

A planarization method comprising:

• providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface having a nonplanar topography;
• providing a fixed abrasive article;
• providing a planarization composition at an interface between the at least one region of platinum-containing surface and the fixed abrasive article;
• and
• planarizing the at least one region of platinum-containing surface with the fixed abrasive article;
• wherein the fixed abrasive article comprises a plurality of CeO2 abrasive particles.

A planarization method comprising:

• providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface having a nonplanar topography;
• providing a fixed abrasive article;
• providing a planarization composition comprising an oxidizing agent, a complexing agent, or a combination thereof at an interface between the at least one region of platinum-containing surface and the fixed abrasive article;
• and
• planarizing the at least one region of platinum-containing surface with the fixed abrasive article;
• wherein the fixed abrasive article comprises a plurality of CeO2 abrasive particles.

A planarization method for use in forming a capacitor or barrier layer:

• providing a wafer having a patterned dielectric layer formed thereon and a Group VIII metal-containing layer formed over the patterned dielectric layer, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
• positioning a first portion of a fixed abrasive article for contact with the platinum-containing layer;
• providing a planarization composition in proximity to the contact between the fixed abrasive and the Group VIII metal-containing layer;
• and
• planarizing the platinum-containing layer with the fixed abrasive article;
• wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.