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US 2003/0119337 A1Published application
Process for oxide fabrication using oxidation steps below and above a threshold temperature
AssigneeAgere Systems Inc.
InventorsYuanning Chen, Sundar Srinivasan Chetlur, Pradip Kumar Roy
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Abstract
A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.
Claims26
A process for fabricating an oxide, the process comprising:
- (a) forming a first oxide portion over a substrate, wherein forming said first oxide portion includes increasing from an initial temperature to a first temperature below a threshold temperature at a first ramp rate, increasing from said first temperature below said threshold temperature to a second temperature below said threshold temperature at a second ramp rate, and generating said first oxide portion;
- then
- (b) forming a second oxide portion, wherein forming said second oxide portion includes increasing from said second temperature below said threshold temperature to a third temperature at a third ramp rate, increasing from said third temperature to a temperature above said threshold temperature at a fourth ramp rate different from said third ramp rate, and then generating said second oxide portion.
A process for fabricating an oxide, the process comprising:
- (a) exposing a substrate to a first oxidizing ambient, wherein exposing said substrate to a first oxidizing ambient includes increasing from an initial temperature to a first temperature below a threshold temperature at a first ramp rate, increasing from said first temperature to a second temperature below said threshold temperature at a second ramp rate, and then growing at least a portion of an oxide;
- then
- (b) exposing said substrate to a second oxidizing ambient, wherein exposing said substrate to a second oxidizing ambient includes increasing from said second temperature to a third temperature at a third ramp rate, and increasing from said third temperature to a temperature above said threshold temperature at a fourth ramp rate different from said third ramp rate, and then growing at least another portion of said oxide;
- then
- (c) cooling said substrate to a temperature below said threshold temperature.
2 more elements
Dependencies are inferred from the claim text.