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US 2003/0119334 A1Published application
Method of manufacturing a flash memory cell
AssigneeHynix Semiconductor Inc.
InventorsNoh Yeal Kwak, Sang Wook Park
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Abstract
The present invention relates to a method of manufacturing a flash memory cell. The method includes forming a stack gate in which a floating gate and a control gate are stacked at a given region of a semiconductor substrate, and performing a rapid thermal nitrification process to form a nitride film at the side of the stack gate and over the semiconductor substrate. Therefore, the present invention can improve a retention characteristic and can prevent movement of threshold voltage control ions.
Claims12
A method of manufacturing a flash memory cell, comprising the steps of:
- stacking a tunnel oxide film, a first polysilicon film, a dielectric film, a second polysilicon film and a tungsten silicide film at a given regions of a semiconductor substrate to form a stack gate in which a floating gate and a control gate are stacked;
- forming a nitride film at the side of said stack gate and on said semiconductor substrate by means of a rapid thermal nitrification process;
- and
- forming a junction region at a given region of said semiconductor substrate by means of an impurity ion implantation process.
1 more element
Dependencies are inferred from the claim text.