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US 2003/0119325 A1Published application
Method of forming a metal line in a semiconductor device
OwnerCheol Mo Jeong, Pyeng Geun Sohninventors
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Abstract
The present invention relates to a method of forming a metal line in a semiconductor device. Upon a process of forming a barrier metal layer of Ti/TiN using an ion metal plasma (IMP) method, an increased AC bias power is applied to increase a deposition thickness of Ti/TiN at an edge portion of the bottom of a contact hole. Therefore, it is possible to prevent penetration of fluorine ions into the semiconductor substrate upon a process of depositing a subsequent tungsten layer.
Claims8
A method of forming a metal line in a semiconductor device, comprising the steps of:
- forming an interlayer insulating film on a semiconductor substrate in which a given structure is formed;
- etching the interlayer insulating film to form a contact hole;
- forming a barrier metal layer on an inner surface of the contact hole, wherein a profile of the barrier metal layer is determined by applying an AC bias power to have a concave profile in a bottom of the contact hole;
- and
- forming a contact plug by which the contact hole is buried and then forming a metal line on the entire structure.
2 more elements
Dependencies are inferred from the claim text.