Method of producing semiconductor device and processing conditions setting device

Abstract

Provided is a method of manufacturing a semiconductor device in which various kinds of processing conditions such as the polishing time in a CMP step can be always provided most appropriate against a wafer of a product lot even if there is an error in the film thickness or the like generated in a CVD step performed prior to the CMP step. The processing conditions in the CMP step are provided based on the film thickness formed in the prior CVD step. Thereby, even if there is an error in the film thickness generated in the CVD step, the processing conditions in the CMP step are provided most appropriate with the consideration of the error. In detail, based on the CVD film thickness and the target value, a processing condition calculator performs calculation of the actual amount of polishing of the present lot. Then, the processing condition calculator performs calculation based on the data, and the searched polishing rate or the searched updated value. Thereby, the polishing time is calculated.

Dependencies are inferred from the claim text.