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US 2003/0119321 A1Published application
Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
AssigneeMicron Technology, Inc.
InventorsStefan Uhlenbrock, Don Westmoreland
Life of this patent
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Abstract
A planarization method includes providing a second and/or third Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing gas.
Claims26
A planarization method comprising:
- positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the Group VIII metal-containing surface;
- wherein the planarization composition comprises an oxidizing gas having a standard reduction potential of at least about 1.4 versus a standard hydrogen electrode at 25° C.
2 more elements
A planarization method comprising:
- positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the Group VIII metal-containing surface;
- wherein the planarization composition comprises an oxidizing gas selected from the group consisting of oxygen, air, chlorine, nitrous oxide, nitric oxide, sulfur trioxide, an interhalogen, and combinations thereof.
2 more elements
A planarization method comprising:
- positioning a Group VIII metal-containing surface of a substrate to interface with a polishing surface, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the Group VIII metal-containing surface;
- wherein the planarization composition comprises an oxidizing gas having a standard reduction potential of at least about 1.4 versus a standard hydrogen electrode at 25° C., wherein the oxidizing gas is present in the composition in an amount of no greater than about 10% by weight.
2 more elements
A planarization method comprising:
- providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface;
- providing a polishing surface;
- providing a planarization composition at an interface between the at least one region of platinum-containing surface and the polishing surface;
- and
- planarizing the at least one region of platinum-containing surface;
- wherein the planarization composition comprises an oxidizing gas having a standard reduction potential of at least about 1.4 versus a standard hydrogen electrode at 25° C.
3 more elements
A planarization method for use in forming a capacitor or barrier layer:
- providing a wafer having a patterned dielectric layer formed thereon and a Group VIII metal-containing layer formed over the patterned dielectric layer, wherein the Group VIII metal is selected from the group consisting of rhodium, iridium, ruthenium, osmium, palladium, platinum, and combinations thereof;
- positioning a first portion of a polishing surface for contact with the Group VIII metal-containing layer;
- providing a planarization composition in proximity to the contact between the polishing surface and the Group VIII metal-containing layer;
- and
- planarizing the Group VIII metal-containing layer;
- wherein the planarization composition comprises an oxidizing gas having a standard reduction potential of at least about 1.4 versus a standard hydrogen electrode at 25° C.
3 more elements
Dependencies are inferred from the claim text.