Short channel transistor fabrication method for semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorJeong Ho Park
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Abstract
The method comprising sequentially forming a first oxide film, a first nitride film, a second oxide film and a second nitride film on a semiconductor substrate; forming a first mask on the second nitride film; etching the second nitride film and the second oxide film forming a first spacer; sequentially forming a gate insulation film and a gate conductor; wet etching the remaining second nitride film, second oxide film, first nitride film and first spacer; performing LDD implantation on the substrate to form an LDD region; forming a second spacer; performing source/drain implantation to form source/drain regions; removing the remaining first oxide film; and forming a salicide region in the gate conductor and the source/drain regions.
Claims7
A short channel transistor fabrication method for a semiconductor device, the method comprising the steps of:
- sequentially forming a first oxide film, a first nitride film, a second oxide film and a second nitride film on a semiconductor substrate;
- forming a first mask in a proper configuration on the second nitride film;
- etching the second nitride film and the second oxide film using the first mask;
- removing the first mask;
- forming a first spacer film on a resultant structure and etching an entire surface of the first spacer film to form a first spacer at lateral portions of remaining portions of the second oxide and nitride films, wherein the first oxide film is etched using the first spacer as a mask;
- sequentially forming a gate insulation film and a gate conductor on an exposed portion of the semiconductor substrate and then performing CMP using the remaining second nitride film as a CMP stop layer to form a gate conductor;
- wet etching the remaining second nitride film, second oxide film, first nitride film and first spacer;
- performing LDD implantation on an entire surface of the substrate using the gate conductor as a mask to form an LDD region;
- forming a second spacer film on an entire surface of the substrate including the LDD region and then etching an entire surface of the second spacer film to form a second spacer at a lateral portion of the gate conductor;
- performing source/drain implantation on an entire surface of the substrate using the gate conductor including the second spacer as a mask to form source/drain regions;
- removing the remaining first oxide film;
- and
- forming a salicide region in the gate conductor and the source/drain regions.
Dependencies are inferred from the claim text.