Monos device having buried metal silicide bit line
AssigneesAdvanced Micro Devices, Inc., Fujitsu Limited
InventorsJusuke Ogura, Mark T. Ramsbey, Arvind Halliyal, Zoran Krivokapic, Minh Van Ngo, Nicholas H. Tripsas
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Abstract
A MONOS device and method for making the device has a charge trapping dielectric layer, such as an oxide-nitride-oxide (ONO) layer, formed on a substrate. A recess is created through the ONO layer and in the substrate. A metal silicide bit line is formed in the recess and bit line oxide is formed on top of the metal silicide. A word line is formed over the ONO layer and the bit line oxide, and a low resistance silicide is provided on top of the word line. The silicide is formed by laser thermal annealing, for example.
Claims19
A method of forming a MONOS (metal oxide nitride oxide semiconductor) device, the method comprising the steps of:
- forming charge trapping dielectric layer on a substrate;
- etching a recess through the charge trapping dielectric layer in accordance with a bit line pattern;
- and
- forming a metal silicide bit line in the recess.
A metal oxide nitride oxide semiconductor (MONOS) comprising:
- a substrate;
- a charge trapping dielectric layer on the substrate;
- a recess in the charge trapping dielectric layer;
- and
- a metal silicide bit line in the recess.
Dependencies are inferred from the claim text.