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US 2003/0119312 A1Published application
Methods, complexes, and system for forming metal-containing films
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
Estimating the term…
Abstract
A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Claims58
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor comprising one or more complexes of the formulas:
- 4
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein optionally R3 and R4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems;
- and
- n=1 to 6;
- and
- forming a metal-containing film from the precursor on a surface of the semiconductor substrate or substrate assembly;
- wherein the metal-containing film is a Group IIIA metal film or a Group IIIA metal alloy film.
8 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor comprising one or more hydride complexes of the formulas:
- 5
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6;
- forming a metal-containing film from the precursor on a surface of the semiconductor substrate or substrate assembly.
6 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a liquid precursor comprising one or more hydride complexes of the formulas:
- 6
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30) organic group, wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6;
- vaporizing the liquid precursor to form vaporized precursor;
- and
- directing the vaporized precursor toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
8 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor comprising one or more complexes of the formulas:
- 7
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein optionally R3 and R4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems;
- and
- n=1 to 6;
- forming a metal-containing film from the precursor on a surface of the substrate;
- wherein the metal-containing film is a Group IIIA metal film or a Group IIIA metal alloy film.
7 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor comprising one or more hydride complexes of the formulas:
- 8
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6;
- forming a metal-containing film from the precursor on a surface of the substrate.
6 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a liquid precursor comprising one or more hydride complexes of the formulas:
- 9
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6;
- vaporizing the liquid precursor to form vaporized precursor;
- and
- directing the vaporized precursor toward the substrate to form a metal-containing film on a surface of the substrate.
8 more elements
A hydride complex of the formula:
- 10
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6.
3 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned therein;
- a vessel containing a precursor comprising one or more complexes of the formulas:
- 11
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein optionally R3 and R4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems;
- and
- n=1 to 6;
- and
- a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned therein;
- a vessel containing a precursor comprising one or more complexes of the formulas:
- 12
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein optionally R3 and R4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems;
- and
- n=1 to 6;
- and
- a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned therein;
- a vessel containing a precursor comprising one or more hydride complexes of the formulas:
- 13
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6;
- and
- a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned therein;
- a vessel containing a liquid precursor comprising one or more hydride complexes of the formulas:
- 14
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5is H;
- and
- n=1 to 6;
- and
- a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a semiconductor substrate positioned therein;
- a vessel containing a precursor comprising one or more complexes of the formulas:
- 15
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein optionally R3 and R4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems;
- and
- n=1 to 6;
- and
- a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a semiconductor substrate positioned therein;
- a vessel containing a precursor comprising one or more hydride complexes of the formulas:
- 16
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6;
- and
- a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a semiconductor substrate positioned therein;
- a vessel containing a liquid precursor comprising one or more hydride complexes of the formulas:
- 17
- wherein:
- M is a Group IIIA metal;
- each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H;
- and
- n=1 to 6;
- and
- a source of an inert carrier gas for transferring the complex or complexes to the chemical vapor deposition chamber.
7 more elements
Dependencies are inferred from the claim text.