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US 2003/0119304 A1Published application
Methods for planarization of metal-containing surfaces using halogens and halide salts
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A planarization method includes providing a metal-containing surface (preferably, a Group VIII metal-containing surface, and more preferably a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes a halogen and a halide salt.
Claims50
A planarization method comprising:
- positioning a metal-containing surface of a substrate to interface with a polishing surface, wherein the metal-containing surface comprises a metal selected from the group consisting of a Group VIIIB metal, a Group IB metal, and a combination thereof;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the substrate surface;
- wherein the planarization composition comprises a halogen-containing compound and a halide salt.
2 more elements
A planarization method comprising:
- providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface;
- providing a polishing surface;
- providing a planarization composition at an interface between the at least one region of platinum-containing surface and the polishing surface;
- and
- planarizing the at least one region of platinum-containing surface;
- wherein the planarization composition comprises a halogen-containing compound and a halide salt.
3 more elements
A planarization method comprising:
- positioning a metal-containing surface of a substrate to interface with a polishing surface, wherein the metal-containing surface comprises a metal selected from the group consisting of a Group VIIIB metal, a Group IB metal, and a combination thereof;
- supplying a planarization composition in proximity to the interface;
- and
- planarizing the substrate surface;
- wherein the planarization composition comprises:
- a halogen-containing compound selected from the group consisting of F2, Cl2, Br2, I2, ClBr, IBr, ICl, BrF, ClF, ClF3, BrF3, ClF5, IF5, IF7, XeF2, HgF2, SF4, alkyl halides, and complexes of X2 with organic bases, and combinations thereof;
- and
- a halide salt selected from the group consisting of NaI, KCl, KBr, NH4F, Et4NBr, Me3NHCl, Me4NF, and combinations thereof.
5 more elements
A planarization method comprising:
- providing a semiconductor substrate or substrate assembly including at least one region of a platinum-containing surface;
- providing a polishing surface;
- providing a planarization composition at an interface between the at least one region of platinum-containing surface and the polishing surface;
- and
- planarizing the at least one region of platinum-containing surface;
- wherein the planarization composition comprises:
- a halogen-containing compound selected from the group consisting of F2, Cl2, Br2, I2, ClBr, IBr, ICl, BrF, ClF, ClF3, BrF3, ClF5, IF5, IF7, XeF2, HgF2, SF4, alkyl halides, and complexes of X2 with organic bases, and combinations thereof;
- and
- a halide salt selected from the group consisting of NaI, KCl, KBr, NH4F, Et4NBr, Me3NHCl, Me4NF, and combinations thereof.
6 more elements
A planarization method for use in forming an interconnect, the method comprising:
- providing a semiconductor substrate or substrate assembly having a patterned dielectric layer formed thereon and a metal-containing layer formed over the patterned dielectric layer, wherein the metal-containing layer comprises a metal selected from the group consisting of a Group VIIIB metal, a Group IB metal, and a combination thereof;
- positioning a first portion of a polishing surface for contact with the metal-containing layer;
- providing a planarization composition in proximity to the contact between the polishing surface and the metal-containing layer;
- and
- planarizing the metal-containing layer;
- wherein the planarization composition comprises a halogen-containing compound and a halide salt.
3 more elements
A planarization method for use in forming an interconnect, the method comprising:
- providing a semiconductor substrate or substrate assembly having a patterned dielectric layer formed thereon and a metal-containing layer formed over the patterned dielectric layer, wherein the metal-containing layer comprises a metal selected from the group consisting of a Group VIIIB metal, a Group IB metal, and a combination thereof;
- positioning a first portion of a polishing surface for contact with the metal-containing layer;
- providing a planarization composition in proximity to the contact between the polishing surface and the metal-containing layer;
- and
- planarizing the metal-containing layer;
- wherein the planarization composition comprises:
- a halogen-containing compound selected from the group consisting of F2, Cl2, Br2, I2, ClBr, ICl, BrF, ClF, ClF3, BrF3, ClF5, IF5, IF7, XeF2, HgF2, SF4, alkyl halides, and complexes of X2 with organic bases, and combinations thereof;
- and
- a halide salt selected from the group consisting of NaI, KCl, KBr, NH4F, Et4NBr, Me3NHCl, Me4NF, and combinations thereof.
6 more elements
Dependencies are inferred from the claim text.