Semiconductor device, a method of manufacturing the same and an electronic device
AssigneeHitachi, Ltd.
InventorTetsuya Hayashida
Life of this patent
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Abstract
By a solder bump, a CSP is bonded to a first electrode of the module substrate of a multi-chip module. For this solder bump, a solder added with an alkaline earth metal such as Ba, Be, Ca or Mg is used. Accordingly, upon solder reflow, phosphorous (P) reacts with the alkaline earth metal, thereby forming a P compound. Owing to dispersion of this P compound inside of the solder bump, no P concentrated layer is formed on the Ni film, making it possible to prevent peeling of the solder bump from the first electrode upon solder reflow. Thus, the present invention makes it possible to improve the solder bonding property.
Claims35
A semiconductor device comprising a wiring substrate, a plurality of electrodes formed over said wiring substrate, a plurality of protruding electrodes formed over said plurality of electrodes, respectively, and a semiconductor chip disposed over said wiring substrate,
- wherein each of said plurality of electrodes has a first conductor film containing Cu and a second conductor film formed between said first conductor film and each of said protruding electrodes and containing Ni and P,
- wherein each of said plurality of protruding electrodes is made of a solder containing Sn and any one of Ba, Be, Ca and Mg, and
- wherein said semiconductor chip is electrically connected to said protruding electrodes.
A semiconductor device comprising a wiring substrate, a plurality of electrodes formed over said wiring substrate, a plurality of protruding electrodes formed over said plurality of electrodes, respectively, and a semiconductor chip disposed over said wiring substrate,
- wherein each of said plurality of electrodes has a first conductor film containing Cu and a second conductor film formed between said first conductor film and each of said protruding electrodes and containing Ni and P,
- wherein each of said plurality of protruding electrodes is made of a solder containing Sn,
- wherein each of said plurality of protruding electrodes contains therein a compound of P, and
- wherein said semiconductor chip is electrically connected to said protruding electrodes.
A semiconductor device comprising a wiring substrate, a plurality of electrodes formed over said wiring substrate, a plurality of protruding electrodes formed over said plurality of electrodes, respectively, and a semiconductor chip disposed over said wiring substrate,
- wherein each of said plurality of electrodes has a first conductor film containing Cu and a second conductor film formed between said first conductor film and each of said protruding electrodes and containing Ni and P,
- wherein each of said plurality of protruding electrodes is made of a solder containing Sn,
- wherein each of said plurality of protruding electrodes contains therein an additive for forming a compound with P, and
- wherein said semiconductor chip is electrically connected to said protruding electrodes.
A semiconductor device comprising a wiring substrate having a principal surface and a surface opposite thereto, a plurality of first electrodes formed over the opposite surface of said wiring substrate, a plurality of protruding electrodes formed over said plurality of electrodes, respectively, and a semiconductor chip disposed over the principal surface of said wiring substrate and electrically connected to said plurality of protruding electrodes via said first plurality of electrodes,
- wherein each of said plurality of first electrodes has a first conductor film containing Cu and a second conductor film formed between said first conductor film and each of said protruding electrodes and containing Ni and P,
- wherein each of said plurality of protruding electrodes is made of a solder containing Sn and any one of Ba, Be, Ca and Mg,
- wherein said semiconductor chip has, over the principal surface thereof, a plurality of semiconductor elements and a plurality of electrodes, and
- wherein said plurality of electrodes of said semiconductor chip are electrically connected to said plurality of protruding electrodes via said plurality of first electrodes.
A semiconductor device comprising a wiring substrate having a principal surface and a surface opposite thereto, a plurality of first electrodes formed over the opposite surface of said wiring substrate, a plurality of protruding electrodes formed over said plurality of first electrodes, respectively, and a semiconductor chip disposed over the principal surface of said wiring substrate and electrically connected to said plurality of protruding electrodes via said plurality of first electrodes,
- wherein each of said plurality of first electrodes has a first conductor film containing Cu and a second conductor film formed between said first conductor film and each of said protruding electrodes and containing Ni and P,
- wherein each of said plurality of protruding electrodes is made of a solder containing Sn,
- wherein each of said plurality of protruding electrodes contains therein a compound of P,
- wherein said semiconductor chip has, over the principal surface thereof, a plurality of semiconductor elements and a plurality of electrodes, and
- wherein said plurality of electrodes of said semiconductor chip are electrically connected to said plurality of protruding electrodes via said plurality of first electrodes.
An electronic device comprising a wiring substrate, a plurality of first and second electrodes formed over said wiring substrate, and first and second semiconductor devices disposed over said wiring substrate and each having a plurality of electrodes,
- wherein each of said plurality of first electrodes has a first conductor film formed over said wiring substrate and containing Cu and a second conductor film formed over said first conductor film and containing Ni and P,
- wherein each of said plurality of second electrodes have a third conductor film formed over said wiring substrate and containing Cu, a fourth conductor film formed over said third conductor film and containing Ni and P, and a fifth conductor film formed over said fourth conductor film and containing Au,
- wherein said plurality of electrodes of said first semiconductor device are electrically connected to said plurality of first electrodes by a plurality of solders containing Sn and any one of Ba, Be, Ca and Mg, respectively, and
- wherein said plurality of electrodes of said second semiconductor device are electrically connected to said plurality of second electrodes, respectively, via a plurality of Au-containing connectors.
An electronic device comprising a wiring substrate, a plurality of first electrodes and second electrodes formed over said wiring substrate, and first and second semiconductor devices disposed over said wiring substrate and each having a plurality of electrodes,
- wherein each of said plurality of first electrodes has a first conductor film formed over said wiring substrate and containing Cu and a second conductor film formed over said first conductor film and containing Ni and P,
- wherein each of said plurality of second electrodes has a third conductor film formed over said wiring substrate and containing Cu, a fourth conductor film formed over said third conductor film and containing Ni and P, and a fifth conductor film formed over said fourth conductor film and containing Au,
- wherein said plurality of electrodes of said first semiconductor device are electrically connected to said plurality of first electrodes with a plurality of solders containing Sn and a compound of P, and
- wherein said plurality of electrodes of said second semiconductor device are electrically connected to said plurality of second electrodes via a plurality of Au-containing connectors.
A semiconductor device comprising a first wiring substrate, a plurality of first electrodes formed over said first wiring substrate, a second wiring substrate, a plurality of second electrodes formed over said second wiring substrate, a plurality of solder protruding electrodes connected between said plurality of first electrodes and said plurality of second electrodes, respectively, and a semiconductor chip electrically connected to said plurality of second electrodes via said plurality of first electrodes and said plurality of solder protruding electrodes,
- wherein each of said plurality of first electrodes is formed over said first wiring substrate,. and has a first conductor film containing Cu and a second conductor film formed over said first conductor film and containing Ni and P,
- wherein each of said plurality of solder protruding electrodes contains Sn and any one of Ba, Be, Ca and Mg, and
- wherein said second wiring substrate has a thermal expansion coefficient greater than that of said semiconductor chip.
A manufacturing method of a semiconductor device having a wiring substrate, a plurality of electrodes formed over said wiring substrate, and a semiconductor chip electrically connected to said plurality of electrodes, comprising the steps of:
- (a) providing the wiring substrate with a plurality of electrodes made of a first conductor film containing Cu, a second conductor film formed over said first conductor film and containing Ni and P, and a third conductor film formed over said second conductor film and containing Au;
- (b) melting a solder containing Sn and any one of Ba, Be, Ca and Mg over said plurality of electrodes of the wiring substrate prepared in said step (a);
- and
- (c) subsequent to said step (b), solidifying said solder over said plurality of electrodes.
A manufacturing method of a semiconductor device having a wiring substrate, a plurality of electrodes formed over said wiring substrate, and a semiconductor chip electrically connected to said plurality of electrodes, comprising the steps of:
- (a) providing the wiring substrate with a plurality of electrodes made of a first conductor film containing Cu, a second conductor film formed over said first conductor film and containing Ni and P, and a third conductor film formed over said second conductor film and containing Au;
- (b) melting a solder containing Sn over said plurality of electrodes of the wiring substrate prepared in said step (a), and at the same time, forming a compound of P in said molten solder;
- and
- (c) subsequent to said step (b), solidifying said solder over said plurality of electrodes.
A manufacturing method of a semiconductor device having a wiring substrate, a plurality of electrodes formed over said wiring substrate, and a semiconductor chip electrically connected to said plurality of electrodes, comprising the steps of:
- (a) providing the wiring substrate with a plurality of first and second electrodes each made of a first conductor film containing Cu, a second conductor film formed over said first conductor film and containing Ni and P, and a third conductor film formed over said second conductor film and containing Au;
- (b) electrically connecting said plurality of first electrodes of said wiring substrate prepared in said step (a) to said semiconductor chip via Au-containing connectors, respectively;
- (c) melting a solder containing Sn and any one of Ba, Be, Ca and Mg over said plurality of second electrodes of said wiring substrate prepared in said step (a);
- and
- (d) subsequent to said step (c), solidifying said solder over said plurality of electrodes.
Dependencies are inferred from the claim text.