Semiconductor device and manufacturing method for the same
OwnerJun Tsukano, Tomoko Takizawa +1inventors
InventorsJun Tsukano, Tomoko Takizawa, Takehiko Maeda
Life of this patent
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Abstract
Concave portions having shapes adapted to the remaining resist are formed in the vicinities of external terminals of metal wiring. The external terminals of the metal wiring project from the side surfaces of the concave portions. By thus constructing the external terminals, no matter which of the X, Y, and Z directions solder balls that are connected to lands displace in, the lands can displace by following the displacement of the solder balls without restriction. Therefore, even when the semiconductor device and a mounting substrate have elongation differently from each other due to a difference in the coefficient of thermal expansion, the elongation can be absorbed.
Claims17
A semiconductor device comprising:
- a semiconductor element having electrodes on one surface;
- metal wiring connected to said electrodes via metal bumps,
- an insulating resin disposed between said semiconductor element and said metal wiring;
- and
- concave portions provided in said insulating resin, within which free ends of external terminals of the metal wiring project.
A manufacturing method for a semiconductor device comprising the steps of:
- forming a metal wiring pattern on the surface of a base metal;
- forming a resist on said base metal and said metal wiring;
- removing said resist while leaving out external terminals of the metal wiring;
- electrically connecting electrodes of a semiconductor element and the wiring via metal bumps;
- sealing the wiring and the resist by an insulating resin between the surface of the base metal and the back surface of the semiconductor element;
- sealing the semiconductor element on the base metal by a sealing resin;
- removing the base metal;
- and
- removing the resist.
A manufacturing method for a semiconductor device comprising the steps of:
- forming a metal wiring pattern on the surface of a base metal;
- forming a resist on said base metal and said metal wiring;
- removing said resist on external terminals of the metal wiring;
- filling a removing resin on the external terminals of the metal wiring;
- removing the resist;
- electrically connecting electrodes of a semiconductor element and the wiring via metal bumps;
- sealing the wiring and the resist by an insulating resin between the surface of the base metal and the back surface of the semiconductor element;
- sealing the semiconductor element by a sealing resin on the base metal;
- removing the base metal;
- and
- removing said removing resin.
A manufacturing method for a semiconductor device comprising the steps of:
- forming a wiring pattern of a metal other than copper on the surface of a base metal that is formed from copper;
- forming a resist on said base metal and said metal wiring;
- removing said resist on external terminals of the metal wiring;
- copper-plating on the external terminals of the metal wiring;
- removing the resist;
- electrically connecting electrodes of a semiconductor element and the wiring via metal bumps;
- sealing the wiring and the resist by an insulating resin between the surface of the base metal and the back surface of the semiconductor element;
- sealing the semiconductor element by a sealing resin on the base metal;
- and
- simultaneously removing the base metal and copper plating.
Dependencies are inferred from the claim text.