Wafer and method of fabricating the same
OwnerFang-Chu Chang, Wen-Bin Yu +1inventors
InventorsFang-Chu Chang, Wen-Bin Yu, Hsin-Chin Wang
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Abstract
A method of manufacturing a wafer is disclosed. The method includes the steps of: (a) providing a substrate on which a number of semiconductor devices are formed and covered with a passivation layer; (b) exposing a number of contact pads in connection with the semiconductor devices by etching a portion of the passivation layer which are corresponding to the contact pads; and (c) cleaning the contact pads by soaking the substrate into a nitric acid solution and than rinsing. The concentration of the nitric acid solution can be about in the range between 0.01 vol. % and 30 vol. % and preferably about in the range between 1 vol. % and 10 vol. %. Thus, defects on wafers are greatly reduced with causing damages.
Claims14
A method of manufacturing a wafer, comprising the steps of:
- providing a substrate on which a plurality of semiconductor devices and contact pads are formed and covered with a passivation layer;
- exposing the contact pads in connection with the semiconductor devices by etching a portion of the passivation layer which are corresponding to the contact pads;
- and
- cleaning the contact pads by soaking the substrate into a nitric acid solution and than rinsing.
A wafer, comprising:
- a substrate, on which a plurality of semiconductor devices and a plurality of contact pads electrically connected to the semiconductor devices are formed;
- and
- a passivation layer covering the semiconductor devices and exposing the contact pads, wherein the contact pads are treated by a nitric acid solution.
A new use of a nitric acid solution for removing residue on contact pads after a passivation layer on a wafer is partially removed so as to expose the contact pads, the nitric acid solution comprising deionized water and nitric acid.
Dependencies are inferred from the claim text.