Method for making a bipolar transistor with an oxygen implanted emitter window
AssigneeAgere Systems Guardian Corp.
InventorsAlan Sangone Chen, Yih-Feng Chyan, Chung Wai Leung, Yi Ma, William John Nagy
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Abstract
The present invention provides a method of manufacturing a bipolar transistor. The method may comprise forming a collector in a semiconductor wafer substrate, forming a base in the collector, implanting an oxide region withing said collector and over the base, and forming an emitter over the substrate such that the oxide region is located between the emitter and the base.
Claims20
A method of manufacturing a bipolar transistor, comprising:
- forming a collector in a semiconductor substrate;
- forming a base in said collector;
- implanting an oxide region within said collector and over said base;
- and
- forming an emitter over said substrate such that said oxide region is located between said emitter and said base.
A method of manufacturing an integrated circuit, comprising:
- forming transistors over a semiconductor substrate;
- forming bipolar transistors over said substrate, including:
- forming a collector within said substrate;
- forming a base in said collector;
- implanting an oxide region within said collector and over said base;
- and
- forming an emitter over said substrate such that said oxide region is located between said emitter and said base;
- and
- forming interconnects over said transistors and said bipolar transistors to form an operative integrated circuit.
A method of manufacturing a plurality of wafer lots wherein each wafer of said wafer lots contains a plurality of integrated circuits thereon, comprising:
- forming transistors over each wafer;
- forming bipolar transistors over and within each of said wafers, including:
- forming a collector within said substrate;
- forming a base in said collector;
- implanting an oxide region within said collector and over said base, said implanting providing a thickness of said oxide region of each of said bipolar transistors that varies from one wafer lot to another wafer lot by at most about 5%;
- and
- forming an emitter over said substrate such that said oxide region is located between said emitter and said base;
- and
- forming interconnects that interconnect said transistors and said bipolar transistors to form operative integrated circuits on said wafers.
Dependencies are inferred from the claim text.