Flash memory cell and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorsCha Deok Dong, Kwang Chul Joo
Life of this patent
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Abstract
The present invention relates to a flash memory cell and method of manufacturing the same. The flash memory cell comprises a trench for defining a semiconductor substrate to be an active region and an inactive region, a trench insulating film burying the trench and having a given protrusion, an impurity region formed in the active region, a floating gate isolated by the protrusion and having rugged portions, and a dielectric film and a control gate formed on the floating gate. Therefore, the present invention can significantly simplify the process, improve the yield of a product and reduce the manufacturing cost.
Claims27
A flash memory cell, comprising:
- a trench for defining a semiconductor substrate to be an active region and an inactive region;
- a trench insulating film burying the trench and having a given protrusion;
- an impurity region formed in the active region;
- a floating gate isolated by the protrusion and having rugged portions;
- and
- a dielectric film and a control gate formed on the floating gate.
A method of manufacturing a flash memory cell, comprising the steps of:
- forming a pad layer on a semiconductor substrate;
- forming a trench at the semiconductor substrate;
- forming a trench insulating film having a protrusion sufficient to bury the trench;
- forming a floating gate isolated by the protrusion, wherein an upper portion of the floating gate has rugged portions;
- and
- forming a dielectric film and a control gate on the floating gate.
Dependencies are inferred from the claim text.