Method for fabricating semiconductor device

A method for fabricating a semiconductor device, comprising the steps of:

• providing a semiconductor substrate on which a transistor made of a gate electrode, a source/drain is formed;
• forming a first insulating layer on the semiconductor substrate, bit-line contact holes and a storage node contact hole being formed in the insulating layer to expose the source and drain;
• forming bit-line contact plugs and storage node in the bit-line contact holes and the storage node contact hole;
• removing the first insulating layer remaining between the bit-line contact plug and the storage node;
• after removing the first insulating layer, forming a second insulating layer on the resultant structure including the bit-line contact plug and the storage node;
• forming a first conductive layer on the second insulating layer;
• forming a third insulating layer on the first conductive layer;
• forming bit-line contact holes by selective removal of the first conductive layer and the third insulating layer opposing to the upper surface of the bit-line contact plug;
• and
• forming a second conductive layer in the bit-line contact holes.