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US 2003/0119251 A1Published application
Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
AssigneesTexas Instruments Incorporated, Agilent Technologies, Inc.
InventorsSanjeev Aggarwal, Stephen R. Gilbert, Scott R. Summerfelt
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Abstract
A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the decreases a reduction in a bottom electrode material during formation of the ferroelectric dielectric portion of the capacitor. In the above manner, a fatigue resistance of the ferroelectric capacitor is increased substantially.
Claims24
A method of forming an FeRAM capacitor, comprising:
- forming an over-oxygenated conductive oxide film as at least a portion of a bottom electrode layer over a substrate;
- forming a ferroelectric dielectric layer over the over-oxygenated conductive oxide film;
- and
- forming a top electrode layer over the ferroelectric dielectric layer.
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A method of forming an FeRAM capacitor, comprising:
- forming an iridium layer over a substrate;
- forming an over-oxygenated iridium oxide layer over the iridium layer, wherein the iridium layer and the over-oxygenated iridium oxide layer together form a bottom electrode for the FeRAM capacitor;
- forming a ferroelectric dielectric layer over the over-oxygenated iridium oxide layer, wherein oxygen diffuses out of the over-oxygenated iridium oxide layer during the formation of the ferroelectric dielectric layer, and reducing to iridium oxide;
- and
- forming a top electrode layer over the ferroelectric dielectric layer.
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Dependencies are inferred from the claim text.