Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising the steps of:

• forming an interlayer insulating film having a contact hole on a semiconductor substrate;
• forming a contact plug filling the contact hole;
• forming a seed conductive layer over the resultant structure;
• forming an adhesive layer on the seed conductive layer;
• forming a dummy oxide layer on the adhesive layer;
• sequentially etching the dummy oxide layer and the adhesive layer to a sacrificial film pattern having an opening which exposes a portion of the seed conductive layer on the contact plug;
• forming a lower electrode filling the opening using electrochemical deposition process;
• sequentially removing the sacrificial film pattern and the seed conductive layer using the lower electrode as a mask;
• and
• sequentially forming a dielectric film and an upper electrode on the entire lower electrode.