Semiconductor device and its production method
AssigneeHitachi, Ltd.
InventorsYuji Suwa, Tomihiro Hashizume, Ken Yamaguchi, Masaaki Fujimori
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Abstract
A method for producing a semiconductor device which comprises causing a dopant present in a semiconductor substrate to segregate in the surface of said semiconductor substrate, thereby forming a thin layer which has a higher dopant concentration than said substrate. The thin layer formed by segregation prevents punch-through which occurs as the result of miniaturization of MOSFET. This method permits economical delta doping without sacrificing the device characteristics.
Claims8
A method for producing a semiconductor device which comprises causing a dopant present in a semiconductor substrate to segregate to the surface of said semiconductor substrate, thereby forming a thin layer which has a higher dopant concentration than said substrate.
A method for producing a semiconductor device which comprises
- a step of doping a substrate with a first impurity,
- a step of causing atoms different from those of the first impurity to be adsorbed to the surface and causing the doped atoms of the first impurity to segregate to the surface,
- a step of burying in the substrate a region formed by segregation in the preceding step, and
- a step of forming a region containing a second impurity whose dopant type is opposite to that of the first impurity.
A method for producing a semiconductor device which comprises
- a step of doping the surface of a semiconductor substrate entirely or partly with an impurity,
- a step of forming an impurity thin layer,
- a step of burying said impurity thin layer in the semiconductor substrate,
- a step of doping said semiconductor substrate with another impurity whose dopant type is opposite to that of said impurity,
- a step of forming an opposite type dopant layer of said impurity having the opposite dopant type,
- a step of cutting into separate two regions by etching said opposite type dopant layer,
- a step of forming an insulating layer, and
- a step of forming a gate electrode, and a step of forming source and drain electrodes.
Dependencies are inferred from the claim text.