Methods of forming an electrically conductive line

A method of forming a crystalline phase material comprising:

• providing a semiconductor wafer having opposing first and second sides;
• forming a crystalline material of a first crystalline phase over the first side of the wafer;
• forming a stress inducing material over the second side of the wafer, the stress inducing material having a first thermal coefficient of expansion, the crystalline material of the first crystalline phase having a second thermal coefficient of expansion, the first coefficient being greater than the second coefficient;
• and
• annealing the crystalline material of the first crystalline phase under conditions effective to transform it to a second crystalline phase.

A method of forming a refractory metal silicide comprising:

• forming a refractory metal silicide of a first crystalline phase;
• providing compressive stress inducing atoms within the refractory metal silicide of the first crystalline phase, the compressive stress inducing atoms being larger than silicon atoms of the silicide;
• and
• with the compressive stress inducing atoms within the first phase refractory metal silicide, annealing the refractory metal silicide of the first crystalline phase under conditions effective to transform said silicide to a more dense second crystalline phase.

A method of forming an electrically conductive line comprising:

• forming a semiconductive material over a substrate;
• forming a refractory metal silicide of a first crystalline phase over and in ohmic electrical connection with the semiconductive material;
• providing a compressive stress inducing material proximate the refractory metal silicide of the first crystalline phase;
• after providing the compressive stress inducing material, annealing the refractory metal silicide of the first crystalline phase to transform said silicide to a more dense and more electrically conductive second crystalline phase;
• and
• patterning the semiconductive material and the refractory metal silicide into a conductive line.

A method of forming a refractory metal silicide comprising:

• forming a refractory metal on a silicon containing substrate;
• providing a compressive stress inducing material proximate the refractory metal;
• after providing the compressive stress inducing material, annealing the refractory metal to form a refractory metal silicide of a first crystalline phase from the refractory metal and silicon of the underlying substrate;
• and
• annealing the refractory metal silicide of the first crystalline phase to transform the first phase silicide to a more dense second crystalline phase.

A method of forming a crystalline phase material comprising:

• forming a crystalline material of a first crystalline phase over a substrate;
• forming a layer over the first phase crystalline material;
• and
• after forming the layer, annealing the crystalline material of the first crystalline phase under conditions effective to transform it to a second crystalline phase.

A method of forming a crystalline phase material comprising:

• forming a crystalline material of a first crystalline phase over a substrate;
• providing dopant atoms to within the first phase crystalline material;
• and
• after providing the dopant atoms, annealing the crystalline material of the first crystalline phase under conditions effective to transform it to a second crystalline phase.