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AssigneeToyoda Gosei Co., Ltd.
InventorsMasayoshi Koike, Yuta Tezen, Toshio Hiramatsu, Seiji Nagai
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The present invention provides a Group III nitride compound semiconductor with suppressed generation of threading dislocations. A GaN layer 31 is subjected to etching, so as to form an island-like structure having a shape of, for example, dot, stripe, or grid, thereby providing a trench/mesa structure, and a mask 4 is formed at the bottom of the trench such that the upper surface of the mask 4 is positioned below the top surface of the GaN layer 31. A GaN layer 32 is lateral-epitaxially grown with the top surface 31a of the mesa and sidewalls 31b of the trench serving as nuclei, to thereby bury the trench, and then epitaxial growth is effected in the vertical direction. In the upper region of the GaN layer 32 formed above the mask 4 through lateral epitaxial growth, propagation of threading dislocations contained in the GaN layer 31 can be prevented.
A method for fabricating a Group III nitride compound semiconductor through epitaxial growth thereof on a substrate, which comprises a step of etching an underlying layer comprising at least one layer of a Group III nitride compound semiconductor, the uppermost layer of the underlying layer being a first Group III nitride compound semiconductor layer, so as to form an island-like structure having a shape of, for example, dot, stripe, or grid, thereby providing a trench/mesa structure, such that the area of a horizontal cross section of the mesa is reduced to zero in association with an increase in the distance between the cross section and the substrate;
A method for fabricating a Group III nitride compound semiconductor through epitaxial growth thereof on a substrate, which comprises a step of etching an underlying layer comprising at least one layer of a Group III nitride compound semiconductor, the uppermost layer of the underlying layer being a first Group III nitride compound semiconductor layer, so as to form an island-like structure having a shape of, for example, dot, stripe, or grid, thereby providing a trench/mesa structure, such that an intermediate layer constituting the underlying layer or the substrate is exposed through the bottom of the trench;
Dependencies are inferred from the claim text.