Method for manufacturing msm photodetector using a hemt structure incorporating a low-temperature grown semiconductor

A method for manufacturing an MSM photodetector using an InP-based delta-doped HEMT structure according to the present invention, comprising the steps of:

• forming an undoped InP buffer layer 100 which is grown on an InP semi-insulating substrate;
• forming an undoped low-temperature grown InxGa1−xAs (0.53≦x) layer 102 on said InP buffer layer 100;
• forming a p-type InxGa1−xAs (x=0.53) first photo-absorption layer 104 which is grown on said low-temperature grown InxGa1−xAs (x=0.53) layer 102;
• forming an undoped InxGa1−xAs (x=0.53) second photo-absorption layer 106 which is grown on said InxGa1−xAs first photo-absorption layer 104;
• forming an undoped InxAl1−xAs (x=0.52) first barrier layer 108 which is grown on said undoped InxGa1−xAs (x=0.53) second photo-absorption layer 106;
• forming a highly n-type delta-doped InxAl1−xAs (x=0.52) second barrier layer 110 which is grown on said undoped InxAl1−xAs (x=0.52) first barrier layer 108;
• and
• forming an undoped InxAl1−xAs (x=0.52) third barrier layer 112 which is grown on said highly n-type delta-doped InxAl1−xAs (x=0.52) second barrier layer 110.

A method for manufacturing an MSM photodetector using a GaN-based delta-doped HEMT structure according to the present invention, comprising the steps of:

• forming an undoped AlxGa1−xN (0≦x≦0.4) buffer layer 100 which is grown on a Sapphire or GaN substrate;
• forming an undoped low-temperature grown InxGa1−xN (0≦x) layer 102 on said AlxGa1−xN (0≦x≦0.4) buffer layer 100;
• forming a p-type GaN first photo-absorption layer 104 which is grown on said low-temperature grown InxGa1−xN (0≦x) layer 102;
• forming an undoped GaN second photo-absorption layer 106 which is grown on said p-type GaN first photo-absorption layer 104;
• forming an undoped AlxGa1−xN (0.05≦x≦0.4) first barrier layer 108 which is grown on said undoped GaN second photo-absorption layer 106;
• forming a highly n-type delta-doped AlxGa1−xN (0.05≦x≦0.4) second barrier layer 110 which is grown on said undoped AlxGa1−xN (0.05≦x≦0.4) first barrier layer 108;
• and
• forming an undoped AlxGa1−xN (0.05≦x≦0.4) third barrier layer 112 which is grown on said highly n-type delta-doped AlxGa1−xN (0.05≦x≦0.4) second barrier layer 110.