Hybrid confinement layers of buried heterostructure semiconductor laser
AssigneeBookham Technology PLC
InventorsGrzegorz J. Pakulski, D. Gordon Knight, Cornelis Blaauw
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Abstract
A semiconductor device such as a buried heterostructure semiconductor laser includes a semiconductor substrate supporting an active region comprised of a multiple quantum well active region and confinement layers having defined gratings and grating overgrowth regions to produce a laser device. The device also includes a current confinement layer including a sequence of doped n-p-n-p semiconductor layers to produce a n-p-n-p blocking structure and a semi-insulating semiconductor material deposited over the n-p-n-p blocking structure.
Claims14
A method of fabricating a buried heterostructure semiconductor device, comprises:
- producing a hybrid current confinement region adjacent to active layers of the device, by:
- disposing a sequence of the p-n-p layers surrounding the active layer;
- and
- disposing a semi-insulating material around the p-n-p layers surrounding the active layers.
A semiconductor device comprising:
- a semiconductor substrate supporting an active region comprised of a multiple quantum well active regions and confinement layers having defined gratings and grating overgrowth regions to produce a laser device;
- and
- a current confinement layer comprising:
- a sequence of doped n-p-n-p semiconductor layers to produce a n-p-n-p blocking structure;
- and
- a semi-insulating semiconductor material adjacent to the etched n-p-n-p blocking structure.
Dependencies are inferred from the claim text.