Light emitting device and manufacturing method thereof
AssigneeLG Electronics Inc.
InventorJun Ho Jang
Life of this patent
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Abstract
Disclosed is a light emitting device capable of increasing the light power and manufacturing method thereof. The light emitting device includes: a first compound semiconductor layer formed on a substrate and having an etched predetermined region at an upper portion thereof; a second compound semiconductor layer formed on a non-etched region of the first compound semiconductor layer and having a rugged region including a plurality of grooves; a transparent electrode formed on the second compound semiconductor layer; a first electrode formed on the transparent electrode; and a second electrode formed on the etched region of the first compound semiconductor layer.
Claims14
A light emitting device comprising:
- a first compound semiconductor layer formed on a substrate and having an etched predetermined region at an upper portion thereof;
- a second compound semiconductor layer formed on a non-etched region of the first compound semiconductor layer and having a rugged region including a plurality of grooves;
- a transparent electrode formed on the second compound semiconductor layer;
- and
- a first electrode formed on the transparent electrode;
- and
- a second electrode formed on the etched region of the first compound semiconductor layer.
A method for manufacturing a light emitting device, the method comprising the steps of:
- (a) sequentially forming an n-type compound semiconductor layer and a p-type compound semiconductor layer on a substrate;
- (b) selectively etching the n-type compound semiconductor layer and the p-type compound semiconductor layer such that a predetermined region on the n-type compound semiconductor layer is exposed;
- (c) forming a rugged region including a plurality of grooves at a predetermined region of an upper surface of the p-type compound semiconductor layer;
- (d) forming a transparent electrode on the p-type compound semiconductor layer;
- and
- (e) forming a p-type electrode on the transparent electrode corresponding to a location where the rugged region is placed, and an n-type electrode on an exposed predetermined region of the n-type compound semiconductor layer.
A light emitting device comprising:
- an n-type compound semiconductor layer formed on a substrate and having an etched predetermined region at an upper portion thereof, said etched predetermined region including a first rugged region including a plurality of grooves;
- an active layer formed on a non-etched region of the n-type compound semiconductor layer;
- a p-type compound semiconductor layer formed on the active layer and having a second rugged region including a plurality of successive grooves;
- a transparent electrode formed on the p-type compound semiconductor layer;
- a p-type electrode formed on the transparent electrode;
- and
- an n-type electrode formed on the first rugged region of the n-type compound semiconductor layer.
Dependencies are inferred from the claim text.