Pre-erase manufacturing method
AssigneeMacronix International Co., Ltd.
InventorsMing-Hung Chou, Smile Huang, Jui-Lin Lu, Tung-Hwang Lin
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Abstract
The present invention includes methods to pre-erase non-volatile memory cells using an electrical erase signal prior to dividing a wafer into dies. Particular aspects of the present invention are described in the claims, specification and drawings.
Claims23
A method of relieving charge accumulations from non-volatile memory structures on dies on a wafer, including:
- applying an electrical erase signal to the non-volatile memory structures on the dies;
- and
- baking the wafer under conditions sufficient to diffuse charges resulting from the erase signal.
A method of relieving charge accumulations from ONO non-volatile memory structures on dies on a wafer, including applying an electrical erase signal to the ONO non-volatile memory structures on the dies prior to subdividing the wafer into the dies.
Dependencies are inferred from the claim text.